New generation high-precision temperature cesium ion source FIB system

Using the Nobel Prize winning laser cooling technology, the company launched a new generation of high-performance focused ion beam system based on a temperature cesium ion source (Cs+LoTIS) in 2020- FIB: ZERO (Cs+LoTIS) and corresponding upgraded ion source accessories - FIB: RETRO. The ultra-low temperature technology adopted by zeroK Nanotech can reduce random motion in ion beams, resulting in ion beam spots in FIB: ZERO having higher brightness, smaller size, and lower energy loss compared to those generated by traditional ion sources. At the same time, it can also generate more secondary ions, achieving clearer imaging.

A series of tests have shown that the new generation FIB: ZERO (Cs+LoTIS) has higher micro/nano processing accuracy, clearer imaging contrast, and depth of field compared to traditional liquid metal gallium ion sources (Ga+LMIS) FIB systems. Its processing speed is basically consistent with traditional FIB, and it has better performance under low ion beam energy conditions. Compared with helium (He+) and neon (Ne+) ion sources FIB, FIB: ZERO has a processing speed of one order of magnitude higher and less processing damage to the sample.

application area

◎ Nanoscale Fine Processing

Chip circuit modification and failure analysis

Preparation of micro nano electromechanical devices

◎ Material micro damage grinding processing

Micro damage transmission electron microscopy sample preparation

Equipment characteristics

Higher brightness: Temperature Cs+ions enable FIB: ZERO (Cs+LoTIS) to have higher brightness compared to traditional FIB (Ga+LMIS). Coupled with its new high contrast and deep field imaging system, the observation range of the sample is larger and clearer.

Smaller ion beam spot size: The FIB: ZERO (Cs+LoTIS) system has a small resolution of up to 2 nm, providing higher processing accuracy than traditional FIB (Ga+LMIS).

Smaller energy loss: up to 10 nA ion beam current, ensuring excellent performance under low energy ion beam conditions.

FIB: ZERO Focused Ion Beam

The FIB: ZERO focused ion beam system using Cs+low-temperature ion source (LoTIS) provides a smaller focal point size with lower beam energy and multiple beam currents. It is the next-generation alternative to FIB based on Ga+, He+, or Ne+today.

FIB: ZERO is a focused ion beam system that utilizes a new high-performance Cs+ion source. Compared to Ga+systems, it can provide better resolution even at lower beam energies. Compared with He+or Ne+systems, its milling speed is one order of magnitude higher and reduces sample damage. FIB: ZERO can also provide higher contrast and higher secondary ion yields.

FIB: ZERO Application Area:

High resolution sputtering

Secondary electron or ion imaging

Gas driven deposition and removal

◎ Circuit editing

FIB: ZERO Main Parameters

Cs+ion beam with 2 nm resolution at 10 keV

◎ 1 pA10+nA beam current

Beam energy of 2 keV and 18 keV

◎ Compatible with most attachments