Solar silicon wafer inspection microscope

Solar silicon wafer inspection microscope
1、 The characteristics and applications of DJM-300C solar silicon wafer detection microscope:
The DJM-300 series solar silicon wafer inspection microscope uses high-quality optical components and is equipped with a super large field of view eyepiece, a falling beam illuminator, and a flat field long working distance light and dark field objective. It is developed for semiconductor wafer inspection, solar silicon wafer manufacturing, electronic information industry, and metallurgical industry, and is used as an advanced industrial metallographic microscope. It can be used for light and dark field observation, falling polarization, and is widely used in factories, research institutions, and higher education institutions for the detection and analysis of solar cell silicon wafers, semiconductor wafers, circuit substrates, FPDs, and precision molds. The system is equipped with a high-quality infinite high beam path system, a three lens transparent reflection microscope DJM-300C, a 5 million high-definition digital camera, and image measurement management software. It can perform various operations such as checking, taking photos, measuring, editing, and saving output of solar panel images. It is an ideal instrument for checking solar cell silicon wafers.
Performance characteristics:
1. We have adopted an image measurement technology that combines advanced optical microscopes with modern imaging analysis.
2. It can perform various operations such as inspection, photography, measurement, storage, and output on solar cell silicon wafers.
3. The system is equipped with a high-quality infinite high beam path system and a large-sized worktable with a three lens transparent reflection microscope.
4. It can measure the crack length, edge length angle, and printing displacement angle deviation of solar cells.
5. It can measure the width, uniformity, distance between the main and secondary gate lines, as well as the distance between the gate lines and the battery edge. It can also measure the length of the gate lines and broken lines, as well as the area of broken lines, defects, and discoloration.
6. It is possible to inspect the surface color difference, suede spots, cracks, edge chipping, chipping, printing deviation of the main and secondary grid lines, back electrode breakage, defects, distortion, discoloration, and other phenomena of solar cells.
7. Impurities and residual components can be analyzed. Impurities include: particles, organic impurities, inorganic impurities, metal ions, silicon powder dust, etc.