Microwave Plasma Chemical Vapor Deposition System - MPCVD
Microwave plasma chemical vapor deposition (MPCVD) technology increases the reaction rate of precursors and reduces the reaction temperature through plasma. Suitable for preparing high-quality hard films and crystals with large area, good uniformity, high purity, and good crystal morphology.
MPCVD is one of the effective methods for preparing large-sized single crystal diamonds. CYRANNUS from IPLAS, Germany ® Plasma technology solves the limitations of traditional plasma technology and can excite highly stable plasma clusters within the range of 10mbar to room pressure, reducing the changes in plasma state caused by fluctuations in airflow, pressure, gas composition, voltage, and other factors, thereby ensuring the sustainability of crystal growth and providing strong guarantees for the synthesis of large-sized single crystal diamonds.
application area
▪ Large size gemstone grade single crystal diamond
▪ High orientation diamond crystals
▪ Nanocrystalline diamond
▪ Carbon nanotubes/diamond-like carbon (DLC)
▪ MPCVD is also suitable for thin film deposition and crystal synthesis of other hard materials such as Al2O3 and c-BN.
Characteristics of MPCVD Plasma Chemical Vapor Deposition Equipment
1. CYRANNUS ® The technology does not require the installation of internal electrodes in the sample chamber. In the deposition chamber, there is no substance other than working gas, clean, and no source of pollution. Plasma generators can maintain a long lifespan and ensure uniform distribution of plasma inside the cavity, further generating crystal purity and growth cycles.
2. CYRANNUS ® The multi electrode configuration outside the cavity of the technology ensures that the plasma cluster is stably generated at the center of the cavity, without corrosive effects on the cavity walls, windows, etc., reducing the source of impurities and improving crystal purity. By CYRANNUS ® The diamond synthesized by the system has a purity above VVS level.
3. The ratio of electron temperature and ion temperature to neutral gas temperature is very high, and the carrier gas maintains an appropriate temperature, which can prevent the substrate temperature from being too high.
4. The microwave generator is stable and easy to control, capable of maintaining plasma in a high-pressure environment from 10 mbar to room pressure. When there are fluctuations in airflow, pressure, gas composition, and voltage, it ensures the stability of the plasma state and ensures that the process of single crystal growth is not interrupted by the aforementioned interference, which is conducive to obtaining large-sized single crystal diamonds.
5. Magnetic confinement can be used to confine the plasma within the agreed space, and the microwave junction and magnetic circuit can be compatible.
6. High safety factors. The high-voltage source and plasma generator are isolated from each other, with small microwave leakage and easy to meet radiation safety standards.
7. It can be paired with multiple power microwave sources and cavities of different sizes to meet different needs from small laboratory equipment to industrial large-scale devices. It is possible to deposit diamond films on substrates with a diameter of 300mm.
Summary of chemical mechanisms:
Hydrocarbons: providing sedimentary materials
Hydrogen gas: generating sp3 bonds
Oxygen: Erosion of graphite phase/sp2 bonds
Inert gas: buffer gas, or the generation of nanocrystals.
Applicable synthetic materials:
Large size gemstone grade single crystal diamond
High orientation diamond crystals
Nanocrystalline diamond
Carbon nanotubes/diamond-like carbon (DLC)
