Four arc high-temperature single crystal growth furnace
- Product Item : 962552
- Category：
Chemical instruments
- Four arc high-temperature single crystal growth furnace
- Laboratory instruments
- biological instruments
- electronic laboratory instruments,
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Four arc high-temperature single crystal growth furnace
The four arc high-temperature single crystal growth furnace produced by the company adopts the arc discharge high-temperature material synthesis method, which is very suitable for growing intermetallic compounds with active chemical properties but a melting point (generally around 3000 degrees Celsius), including binary and quaternary intermetallic compounds containing rare earth elements (or metallic uranium), such as UGe2, UPt3, V3Si, URu2Si2, RE2Co17, CePd2Al3, REFe10Ti2 alloy single crystals and Nd2Fe14B, URhAl, UNiAl, and RENi5 alloy single crystals. During the growth process, the raw materials are placed in a rotating copper crucible, and four electrodes discharge simultaneously to form high-temperature melted raw materials. The precision controlled crystal pulling rod uses the Czochralski method to pull the melted raw materials into single crystals. The vacuum degree of the sample room can reach 10-6 torches, and protective gas can also be filled.
Application field:
Very suitable for growing intermetallic compounds with active chemical properties but a melting point (usually around 3000 ℃), including binary and quaternary intermetallic compounds containing rare earth elements (or metallic uranium).
Product features:
*Heating using the four arc method
*Can achieve high temperature of 3000 ° C
*Suitable for intermetallic compound materials
