Wafer level ultrafast 3D magnetic field probe stage
Hprobe, a French company, was established in March 2017 in the Grenoble region of France with the aim of providing fast, accurate, and flexible testing equipment for the integrated circuit field. Its main application direction is magnetic random access memory (MRAM). As an alternative technology to on-chip system embedded memory (SoC), MRAM technology is becoming increasingly popular among major manufacturers in the microelectronics industry, leading to an increasing demand for high-end testing equipment. The IBEX-300 wafer level ultrafast 3D magnetic field probe station produced by Hprobe is a good choice.
Compared to other probe stations, the IBEX-300 wafer level ultrafast 3D magnetic field probe station is a specialized instrument for characterizing and testing wafers under magnetic field effects. It uses a 3D magnetic field generator and advanced customizable hardware, providing a complete testing solution for the development, processing, and production of magnetic devices (sensors and memory).
Application direction of Hprobe
Magnetic tunnel junction
Magnetic Random Access Memory
Integrated magnetic sensors (Hall, GMR, TMR)
Intelligent sensors
Features of Hprobe probe platform products
Can be used on 100-300mm wafers
Provide large in-plane and vertical magnetic fields
Three dimensional control of magnetic field orientation and rotation
Fast scanning capability
Embedded sensor calibration
Automatic testing program
MRAM and sensor parameter extraction software
Compatible with standard probe cards
Quick sweeping ability
Principle of Hprobe probe station technology
The probe station adopts a unique three-dimensional magnetic field generator, and each magnetic field spatial axis is independently driven. With these three degrees of freedom, users can apply and control fields in any spatial direction, as well as generate rotation fields. The three-dimensional magnetic field device is equipped with all relevant accessories, testing procedures, and magnet calibration kits.
A three-dimensional magnetic generator is placed on top of the probe stage and generates a local magnetic field on the wafer. In order to adapt to the device testing design, the probe is placed in the gap between the wafer and the generator. The Z-direction distance between the magnetic field generator and the wafer holder can generally be around 500 μ Adjustable between 5mm, depending on the probe card and probe used.
Basic parameters of Hprobe station
In plane (XY) vertical (Z)
Large uniaxial magnetic field 350 mT 550 mT
Magnetic field uniformity @+/1mm ± 1% ± 1%
Magnetic field resolution 0.05 mT 0.02 mT
Angle resolution 0,02 °-
Field scan sampling rate<50 kHz<50 kHz
R-H loop test time<100 ms<100 ms
Hprobe probe station instrument configuration
The Hprobe stage is equipped with a complete set of instrument drivers and measurement for most magnetic devices, such as MRAM (STT, SOT, voltage control), sensors (AMR, GMR, TMR), and magnetic MEMS. The instrument can include a source meter and measurement unit (SMU), a digital multimeter (DMM), any waveform generator (AWG), pulse generator (PG), exchange matrix, data acquisition board, etc. Other instruments can be provided upon request and can be easily integrated into the hardware and software of the tool.
Arbitrary waveform generator (AWG)
+Dual channel, bandwidth 40MHz
+Sine wave, square wave&pulse 30MHz
+Slant wave&Triangular wave 200kHz
+Any waveform<1M sampling/channel
+Large sampling rate of 250M sampling/second
