Magnetic Fine Control System for Ion Irradiation

Helium-S Magnetic Fine Control System for Ion Irradiation ®

The company adopts Dr. Ravelosona's innovative technology and has 20 years of experience in ion beam technology for magnetic materials, with over 40 published articles. Spin Ion's product - Helium-S, an ion irradiation magnetic fine control system that can be used for various magnetic studies ®， By adopting innovative ion beam technology, precise control of atomic displacement can be achieved through ultra compact and fast helium ion beam equipment, enabling material processing at the atomic scale and regulating thin films and heterostructures through ion beam processes. Currently, more than 20 scientific and industrial users and partners worldwide are using this technology. In 2020, Spin Ion installed the first Helium-S in China ® The system, with its unique technology, is attracting increasing attention from relevant scientific research circles and industrial fields.
Application field:
-Magnetic Random Access Memory (MRAM): Spin Transfer Moment Magnetic Random Access Memory (STT-MRAM), Spin Orbit Moment Magnetic Random Access Memory (SOT-MRAM), Domain Wall Magnetic Random Access Memory (DW-MRAM), etc;
-Spintronics: skyrmions, magnetic tunnel junctions, magnetic sensors, etc;
-Magnetic related: magnetic oxides, multiferroic materials;
-Other: Film modification, chip processing, neuromorphic devices, logic devices, etc.

Product features:
-The displacement between atoms can be precisely controlled through ultra compact and fast helium ion beam equipment, and the magnetic properties of magnetic thin films or wafers can be precisely controlled through helium ion irradiation.
-Can provide He+ion beam with energy range of 1-30 keV
-Adopting an innovative electron cyclotron resonance (ECR) ion source
-Can rapidly and uniformly irradiate a 25 mm sample (for a few minutes)
-Ultra compact design saves experimental space
-Can be interconnected with existing ultra-high vacuum equipment